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PMDT Power Device Dynamic Parameters Testing System
The PMDT power device dynamic parameter testing system is the specialized system for dynamic parameter testing of MOSFETs, IGBTs, SiC MOSFETs, and other devices. It can safely and conveniently test the switching time and loss of power devices, evaluate the safe working area
SOA of devices, verify the short-circuit protection characteristics of devices and drive circuits, and measure the stray inductance of power components.
The equipment can be used for both power device selection evaluation and optimization design of drive circuits and power busbars, which can help users develop power electronic power platforms with more optimized performance and reliable operation.
Product Feature
l High voltage up to 2000V (Max expansion to 8kV)
l High current up to 2000A (Support expanded to 6000A)
l Low parasitic inductance design,<20nH parasitic inductance
l Security protection mechanism, integrated explosion-proof, overcurrent/overvoltage protection
l Full functional testing coverage，support DPT, RBSOA、SCSOA、Qg and other parameters test
l Automation and Intelligence，automatic switching of load inductance
l Support wide temperature range,optional high-temperature module (room temp -200 ℃) or heat flow meter (-40 ℃ -200 ℃)
l Compatible with multiple package, customize fixtures according to testing requirements
System Composition
TEST ITEMS
Turn-on characteristics | Turn-on delay time (td(on)), Turn-on rise time (tr), Turn-on time (ton), Turn-on energy loss (E(on)), Turn-on voltage slope (dv/dt), Turn-on current slope (di/dt), Id vs. t, Vds vs. t, Vgs vs. t, Ig vs. t |
Turn-off characteristics
| Turn-off delay time (td(off)), Turn-off rise time (tf), Turn-off time (toff), Turn-off energy loss (E(off)), Turn-off voltage slope (dv/dt), Turn-off current slope (di/dt), Id vs. t, Vds vs. t, Vgs vs. t, Ig vs. t |
Reverse recovery characteristics | Reverse recovery time (trr), Reverse recovery charge (Qrr), Reverse recovery energy (Err), Max reverse recovery current (Irrm), Reverse recovery voltage slope (dv/dt), Reverse recovery current slope (di/dt), Reverse recovery current characteristic (Id vs. t)
|
Short circuit characteristics | Short circuit time (Tsc), Short circuit saturation current (Iscsat), Vce peak (VCEmax), Short circuit energy (Esc), Short circuit power (Psc) |
Gate charge | Total gate charge (Qg), Threshold gate charge (Qgs (th)), Gate-source charge (Qgs), Gate-drain charge (Qgd), Gate charge curve (Vgs vs. t) |
Reverse biased safety work area | Turn off voltage peak (VCE_peak), Turn off current peak (Ic), Vce vs. t, Ic vs. t |
TEST FIXTURES
For power semiconductors with different packaging types on the market, such as IGBT, SiC MOS,Si MOS and other products, Precise company provides a complete set of testing fixture solutions, which can be used for testing TO single tube, half bridge module and other products.
SOFTWARE INTERFACE
Product selection
Model | Specifications | High voltage differential probe | Flexible current probe |
PMDT2003 | 2000V/300A/ 12kA(short-circuit) | Vds(1 probe): bandwidth: 500MHz, differential voltage: 200X: 350V, 2000X: 3500V | Ig (1 probe): bandwidth 100M, range 30A Ic (1 probe): bandwidth 30M, range 300A Icsc (1 probe): bandwidth 30M, range 12kA |
PMDT2010 | 2000V/1000A/ 12kA(short-circuit) | Vds(1 probe): bandwidth: 500MHz, differential voltage: 200X: 350V, 2000X: 3500V | Ig (1 probe): bandwidth 100M, range 30A Ic (1 probe): bandwidth 30M, range 1200A Icsc (1 probe): bandwidth 30M, range 12kA
|
PMDT2020 | 2000V/2000A/ 12kA(short-circuit) | Vds(1 probe): bandwidth: 500MHz, differential voltage: 200X: 350V, 2000X: 3500V | Ig (1 probe): bandwidth 100M, range 30A Ic (1 probe): bandwidth 30M, range 3000A Icsc (1 probe): bandwidth 30M, range 12kA |
※The above models are our standard models. Special specifications and parameters, as well as testing fixtures, please contact the manufacturer.
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